收藏本站
New Product
Si4126DY
Vishay Siliconix
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
V DS Temperature Coefficient
V GS(th) Temperature Coefficient
V DS
Δ V DS /T J
Δ V GS(th) /T J
V GS = 0 V, I D = 250 μA
I D = 250 μA
30
24
- 6.4
V
mV/°C
Gate-Source Threshold Voltage
V GS(th)
V DS = V GS , I D = 250 μA
1.0
2.5
V
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
I GSS
I DSS
I D(on)
V DS = 0 V, V GS = ± 20 V
V DS = 30 V, V GS = 0 V
V DS = 30 V, V GS = 0 V, T J = 55 °C
V DS ≥ 5 V, V GS = 10 V
30
± 100
1
10
nA
μA
A
Drain-Source On-State Resistance a
Forward Transconductance a
R DS(on)
g fs
V GS = 10 V, I D = 15 A
V GS = 4.5 V, I D = 10 A
V DS = 15 V, I D = 15 A
0.0022
0.0027
75
0.00275
0.0034
Ω
S
Dynamic b
Input Capacitance
C iss
4405
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V DS = 15 V, V GS = 0 V, f = 1 MHz
760
285
pF
Total Gate Charge
Gate-Source Charge
Q g
Q gs
V DS = 15 V, V GS = 10 V, I D = 20 A
V DS = 15 V, V GS = 4.5 V, I D = 20 A
70
30
10.2
105
45
nC
Gate-Drain Charge
Q gd
7.4
Gate Resistance
R g
f = 1 MHz
0.3
1.4
2.8
Ω
Turn-On Delay Time
t d(on)
36
60
Rise Time
Turn-Off Delay Time
t r
t d(off)
V DD = 15 V, R L = 1.5 Ω
I D ? 10 A, V GEN = 4.5 V, R g = 1 Ω
20
53
40
90
Fall Time
Turn-On Delay Time
t f
t d(on)
24
15
40
30
ns
Rise Time
Turn-Off Delay Time
Fall Time
t r
t d(off)
t f
V DD = 15 V, R L = 1.5 Ω
I D ? 10 A, V GEN = 10 V, R g = 1 Ω
10
43
10
20
70
20
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current a
I S
I SM
T C = 25 °C
7.0
70
A
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
V SD
t rr
Q rr
t a
t b
I S = 3 A
I F = 10 A, di/dt = 100 A/μs, T J = 25 °C
0.71
38
38
19
20
1.1
60
60
V
ns
nC
ns
Notes:
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 69994
S-80895-Rev. B, 21-Apr-08
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
SI4134DY-T1-E3 MOSFET N-CH D-S 30V 8-SOIC
SI4158DY-T1-GE3 MOSFET N-CH D-S 20V 8-SOIC
SI4170DY-T1-GE3 MOSFET N-CH 30V 30A 8-SOIC
SI4174DY-T1-GE3 MOSFET N-CH D-S 30V 8-SOIC
SI4186DY-T1-GE3 MOSFET N-CH 20V 35.8A 8SOIC
SI4190ADY-T1-GE3 MOSF N CH 100V 18.4A SO8
SI4214DDY-T1-E3 MOSFET 2N-CH 30V 8.5A SO8
SI4214DY-T1-GE3 MOSFET N-CH D-S 30V 8-SOIC
相关代理商/技术参数
SI4126-F-BM 功能描述:射频无线杂项 WLAN SYNTHSIZER MLP-28 RoHS:否 制造商:Texas Instruments 工作频率:112 kHz to 205 kHz 电源电压-最大:3.6 V 电源电压-最小:3 V 电源电流:8 mA 最大功率耗散: 工作温度范围:- 40 C to + 110 C 封装 / 箱体:VQFN-48 封装:Reel
SI4126-F-BMR 功能描述:IC SYNTHESIZER RF2/IF 28MLP RoHS:是 类别:集成电路 (IC) >> 接口 - 驱动器，接收器，收发器 系列:- 标准包装:1,140 系列:AU 类型:收发器 驱动器/接收器数:1/1 规程:CAN 电源电压:5.3 V ~ 27 V 安装类型:表面贴装 封装/外壳:14-SOIC（0.154"，3.90mm 宽） 供应商设备封装:14-SO 包装:管件 其它名称:935267940512AU5790D14AU5790D14-ND
SI4126-F-GM 功能描述:射频无线杂项 WLAN Synthesizer (RF2 IF) RoHS:否 制造商:Texas Instruments 工作频率:112 kHz to 205 kHz 电源电压-最大:3.6 V 电源电压-最小:3 V 电源电流:8 mA 最大功率耗散: 工作温度范围:- 40 C to + 110 C 封装 / 箱体:VQFN-48 封装:Reel
SI4126-F-GMR 功能描述:射频无线杂项 WLAN Synthesizer RF2/IF RoHS:否 制造商:Texas Instruments 工作频率:112 kHz to 205 kHz 电源电压-最大:3.6 V 电源电压-最小:3 V 电源电流:8 mA 最大功率耗散: 工作温度范围:- 40 C to + 110 C 封装 / 箱体:VQFN-48 封装:Reel
SI4126M-EVB 功能描述:射频开发工具 802.11b and ISM Band RoHS:否 制造商:Taiyo Yuden 产品:Wireless Modules 类型:Wireless Audio 工具用于评估:WYSAAVDX7 频率: 工作电源电压:3.4 V to 5.5 V
SI4128DY 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET
Si4128DY-T1-E3 功能描述:MOSFET 30V 10.9A 5.0W 24mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4128DY-T1-GE3 功能描述:MOSFET 30V 10.9A 5.0W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube